Method of improving pattern profile of thin photoresist layer

摘要

A method of improving the pattern profile of a thin photoresist layer. First, a substrate is provided. Next, a thin patterned photoresist layer is formed on the substrate. An inert gas treatment is performed on the thin patterned photoresist layer. Finally, the substrate is etched using the thin patterned photoresist layer as a shield. According to the present invention, the thin patterned photoresist layer has an effective pattern profile for etching after inert gas treatment.