发明名称 |
Methods for forming double gate electrodes using tunnel and trench |
摘要 |
A double gate electrode for a field effect transistor is fabricated by forming in a substrate, a trench and a tunnel that extends from a sidewall of the trench parallel to the substrate. An insulating coating is formed inside the tunnel. A bottom gate electrode is formed within the insulating coating inside the tunnel. An insulating layer is formed on the substrate and a top gate electrode is formed on the insulating layer opposite the bottom gate electrode.
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申请公布号 |
US2004157396(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20040773022 |
申请日期 |
2004.02.05 |
申请人 |
LEE BYEONG-CHAN;CHOI SI-YOUNG;YOO JONG-RYEOL;LEE DEOK-HYUNG;JUNG IN-SOO |
发明人 |
LEE BYEONG-CHAN;CHOI SI-YOUNG;YOO JONG-RYEOL;LEE DEOK-HYUNG;JUNG IN-SOO |
分类号 |
H01L21/336;H01L21/8234;H01L21/8242;H01L27/108;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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地址 |
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