METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT

摘要

The invention relates to a method for producing a semiconductor component, according to which a semiconductor layer (2) is separated from a substrate (1) by irradiation with laser pulses (6), the pulse duration of the laser pulses (6) being less than or equal to 10 ns. The laser pulses (6) have a spatial beam profile (7), whose flank slope is gentle enough to prevent cracks in the semiconductor layer (2) caused by thermally induced lateral stresses, during the separation of the semiconductor layer (2) from the substrate (1).