METHOD FOR FABRICATING BIT LINE OF SEMICONDUCTOR DEVICE USING CVD-Ti LAYER, CVD-TiN LAYER, AND TUNGSTEN LAYER HAVING SPECIFIC RESISTANCE LOWER THAN SPECIFIC RESISTANCE OF TUNGSTEN SILICIDE LAYER

摘要

PURPOSE: A method for fabricating a bit line of a semiconductor device is provided to improve thermal stability in a post-process by forming the bit line with a CVD-Ti layer, a CVD-TiN layer, and a tungsten layer. CONSTITUTION: A lower CVD-Ti layer(11) is formed on a semiconductor substrate(1) by using a PECVD method. A lower CVD-TiN layer is deposited thereon by using a thermal CVD method. An upper CVD-Ti layer(13) is formed thereon and a thermal process is performed. An upper CVD-TiN layer is deposited thereon by using a CVD method. A tungsten layer pattern is formed thereon.