| 发明名称 |
SEMICONDUCTOR DEVICE AND ITS DESIGN METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents an uppermost interconnection from being short-circuited with a re-interconnection under a bump without a short-circuit defect. <P>SOLUTION: The semiconductor device has the uppermost interconnection under the bump connected to an interconnection of a re-interconnected layer. The uppermost interconnection is formed so that the surface shape of a protective film coating this upper layer is not made uneven under the bump. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
| 申请公布号 |
JP2004228321(A) |
申请公布日期 |
2004.08.12 |
| 申请号 |
JP20030013923 |
申请日期 |
2003.01.22 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ISEDA YASUNAGA;KANAZAWA HIDEKI |
| 分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/82;H01L21/822;H01L23/485;H01L27/04 |
主分类号 |
H01L23/52 |
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