发明名称 |
Semiconductor device, method of fabricating the same, stack-type semiconductor device, circuit board and electronic instrument |
摘要 |
A method of fabricating a semiconductor device including: a first step of forming a through hole in a semiconductor element having electrodes on a first surface; and a second step of forming a conductive layer which is electrically connected to the electrodes and is provided from the first surface through an inner wall of the through hole to a second surface of the semiconductor element which is opposite to the first surface. The conductive layer is formed to have connecting portions on the first and second surfaces so that a distance between at least two electrodes among the electrodes is different from a distance between the connecting portions on at least one of the first and second surfaces, in the second step. |
申请公布号 |
US2004155355(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20040767999 |
申请日期 |
2004.02.02 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
HANAOKA TERUNAO;WADA KENJI |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/31;H01L23/48;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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