发明名称 Semiconductor device, method of fabricating the same, stack-type semiconductor device, circuit board and electronic instrument
摘要 A method of fabricating a semiconductor device including: a first step of forming a through hole in a semiconductor element having electrodes on a first surface; and a second step of forming a conductive layer which is electrically connected to the electrodes and is provided from the first surface through an inner wall of the through hole to a second surface of the semiconductor element which is opposite to the first surface. The conductive layer is formed to have connecting portions on the first and second surfaces so that a distance between at least two electrodes among the electrodes is different from a distance between the connecting portions on at least one of the first and second surfaces, in the second step.
申请公布号 US2004155355(A1) 申请公布日期 2004.08.12
申请号 US20040767999 申请日期 2004.02.02
申请人 SEIKO EPSON CORPORATION 发明人 HANAOKA TERUNAO;WADA KENJI
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L21/768;H01L23/12;H01L23/31;H01L23/48;H01L25/065;H01L25/07;H01L25/18;(IPC1-7):H01L23/48 主分类号 H01L23/52
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