发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide an oscillator capable of reducing oscillation power at the time of reaching the balanced state of oscillation without lowering small signal loop gain. <P>SOLUTION: In the oscillator, on one main surface of a substrate composed of a semiconductor material, an FET 1, an output matching circuit C2 having a diode 2, an LC serial resonance circuit C1 having a capacitor 3 and an inductor 4, a transmission line 5 and a source inductor 6 are disposed. The source of the FET 1 is grounded through the source inductor 6. The drain of the FET 1 is connected through a transmission line 10 to the anode of the diode 2 constituting the output matching circuit C2. The FET 1 amplifies high frequency signals inputted to a gate and outputs them from the drain to the output matching circuit C2. The diode 2 limits the oscillation power. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004228946(A) 申请公布日期 2004.08.12
申请号 JP20030014645 申请日期 2003.01.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 MATSUZUKA TAKAYUKI
分类号 H03G11/02;H03B5/02;H03B5/18 主分类号 H03G11/02
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