| 摘要 |
PROBLEM TO BE SOLVED: To provide an EEPROM (erasable programable read only memory) cell and a manufacturing method of the same. SOLUTION: The EEPROM cell has a source region 80, a buried N + region 56, and a drain region 82, mutually separately formed along the side in an active region. In the active region between the buried N + region 56 and a drain region 82, a cell depletion region 78 is formed and mutually electrically connected. A memory gate 74 is formed in a first channel region between the source region 80 and the buried N + region 56, and on the buried N + region 56, and a selection gate 76 is formed on a second channel region between the cell depletion region 78 and the drain region 82. Here, a tunnel region 60 is located on the buried N + region 56, and a sideward direction from the boundary of the tunnel region 60 to the boundary of the buried N + region 56 is constantly b at each position. The tunnel region 60 can be formed by using a spacer pattern formed in an opening part for forming the buried N + region 56, and on a side wall of the opening part. COPYRIGHT: (C)2004,JPO&NCIPI
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