SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can effectively inhibit a defect having ocurred in a substrate and has good performance, and its manufacturing method. SOLUTION: The semiconductor device includes: the semiconductor substrate; an element isolating region which has a trench formed on the semiconductor device and a buried dielectric film buried in the trench, a gate dielectric film formed adjacent to the element separating region, an active region where a gate electrode are formed on the gate dielectric film; and a region where at least a part of the gate electrode is positioned on the element isolating region and which is formed so that a first interface of the buried dielectric film, in which the gate electrode is positioned, is at a position above a second interface of the buried dielectric film in a second region in which the gate electrode is not located. COPYRIGHT: (C)2004,JPO&NCIPI