| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for improving RBSOA at an edge of a stripe cell. SOLUTION: A chip unit is composed of an IGBT chip 1, an emitter metal terminal 31, a collector metal terminal 33, and a chip fixed frame 34 fixing them. A groove 3 is formed on the face of the emitter metal terminal 31 opposed to the neighborhood of the center of a contact face 35 of the emitter electrode of the IGBT chip 1 in groove width W1. The edge of the stripe cell formed on the IGBT chip 1 is not in contact with the emitter metal terminal 31 by the groove 32, and RBSOA breakage is prevented at the edge. COPYRIGHT: (C)2004,JPO&NCIPI
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