发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device having a multilayer structure is disclosed, which comprises at least two wiring layers, and a via contact formed between the at least two layers and made of the same metal wiring material as the metal wiring material of the at least two wiring layers, wherein the metal wiring material of the via contact contains an additive which is not contained in the metal wiring materials of the at least two wiring layers.
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申请公布号 |
US2004155349(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20040752642 |
申请日期 |
2004.01.07 |
申请人 |
NAKAMURA NAOFUMI;SHIBATA HIDEKI |
发明人 |
NAKAMURA NAOFUMI;SHIBATA HIDEKI |
分类号 |
H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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