| 摘要 |
An invention is provided for an overlapping row decode in a multiport memory. The overlapping row decode includes a first plurality of predecode wires positioned on a first metalization layer. The first plurality of predecode wires is configured to address wordline drivers of a first port. In addition, a second plurality of predecode wires is located on a third metalization layer above the first metalization layer. The second plurality of predecode wires is configured to address wordline drivers of a second port. The overlapping row decode further includes a plurality of wordline connections that are formed on a second metalization layer between the first metalization layer and the third metalization layer. The plurality of wordline connections includes a first portion and a second portion. The first portion of wordline connections is in communication with the first plurality of predecode wires and the wordline drivers of the first port. The second portion of wordline connections is in communication with the second plurality of predecode wires and the wordline drivers of the second port.
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