METHOD OF FORMING METAL LINE OF SEMICONDUCTOR DEVICE FOR REDUCING CONTACT RESISTANCE AND IMPROVING LEAKAGE CURRENT CHARACTERISTIC

摘要

PURPOSE: A method of forming a metal line of a semiconductor device is provided to restrict corrosion of a silicon substrate and a metal line by minimizing the remaining amount of Cl within a thin film. CONSTITUTION: An insulating layer(12) is deposited on a silicon substrate(10). A contact hole is formed by an etch process using a contact mask. A plasma process for the insulating layer of the sidewall of the contact hole and the silicon substrate of the bottom of the contact hole is performed by using mixed gas of hydrogen and argon. A Ti layer is deposited thereon by a CVD method using TiCl4 as a source. The plasma process for the Ti layer is performed by using mixed gas of nitrogen and hydrogen. A TiN layer is deposited on the TiN layer to form a metal line.