| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve reliability and manufacturing yield of an insulating gate type field effect transistor which is formed on a semiconductor thin film on an insulating film. <P>SOLUTION: A second integrated insulating gate type transistor which is controlled by a gate potential and a drain potential of a first insulating gate type transistor, is formed inside a multilayer semiconductor substrate. The source of the second insulating gate type transistor is connected to the substrate terminal of the first insulating gate type transistor through an embedded gate insulating film. The source is not doped by ion implantation. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
| 申请公布号 |
JP2004228589(A) |
申请公布日期 |
2004.08.12 |
| 申请号 |
JP20040058542 |
申请日期 |
2004.03.03 |
| 申请人 |
RENESAS TECHNOLOGY CORP;RENESAS EASTERN JAPAN SEMICONDUCTOR INC |
发明人 |
FUJIWARA TAKESHI;USHIYAMA MASAHIRO;ICHINOSE KATSUHIKO;OHASHI TADASHI;SAITO TETSUO |
| 分类号 |
H01L21/768;H01L21/318;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/06;H01L27/092;H01L27/108 |
主分类号 |
H01L21/768 |
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