| 摘要 |
PROBLEM TO BE SOLVED: To a semiconductor wafer that can be used in an electronic structure which has a line width of 0.1μm or less, and of which the flatness is assured the nearest the periphery edge in a front-side surface as possible. SOLUTION: This wafer is a polished semiconductor wafer which has a front-side surface, a back-side surface and a periphery R, and of which the periphery R is located radius distance apart from the center of a semiconductor wafer, and forms the circumference circle of the semiconductor wafer, and which is an edge portion provided with a specific profile of the semiconductor wafer. Further, the wafer is constituted so that the greatest deviation in the flatness in the back-side surface from an ideal flat surface is set to 0.7μm or less in an area between a position at 6 mm from the periphery R and a position at 1 mm from the periphery R of the back-side surface. COPYRIGHT: (C)2004,JPO&NCIPI
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