| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure that dispenses with excessive minute processing, suppresses an increase in manufacturing process and manufacturing cost, and can enhance the density of capacitance in the semiconductor device provided with the laminated capacitor of an MOS (metal oxide semiconductor) capacitor and a Poly-Poly capacitor. SOLUTION: A high conductive diffusion layer 1 doped with an n or p-type dopant is formed on a semiconductor substrate. A gate oxide film 2 is formed on the surface of the high conductive diffusion layer 1 by oxidizing a high conductive diffusion layer 1. A first polysilicon layer 3 doped with the n or p-type dopant is formed on the gate oxide film 2, and a dielectric layer 4 is formed on the first polysilicon layer 3. A second polysilicon layer 5 doped with the n or p-type dopant is formed on the dielectric layer 4. First aluminum wiring on an insulating film 11 is electrically connected to the high conductive diffusion layer 1 and the second polysilicon layer 5 through a contact hole 13. COPYRIGHT: (C)2004,JPO&NCIPI
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