SEMICONDUCTOR DEVICE AND THYRISTOR

摘要

PROBLEM TO BE SOLVED: To attain a thyristor lessening an electrostatic capacity. SOLUTION: A first n-type conductive region 2 and a second n-type conductive region 3 are formed on a p-type semiconductor substrate 100. A first p-type conductive region 4 and a hole-like conductive region 40 are formed in the first n-type conductive region 2, and further a break-over voltage determination conductive region 30 is formed on the outer peripheral part of the first n-type conductive region 2 and in the neighborhood thereof. By the structure, since break-over voltage is determined in the break-over voltage determination conductive region 30 and the neighborhood thereof, the break-over voltage enhances resistivity of the semiconductor substrate as it is in the conventional to lessen the electrostatic capacity. COPYRIGHT: (C)2004,JPO&NCIPI