RAM memory with shared SA structure, e.g. DRAM semiconductor memory, has a sense amplifier that can be separately switched for each individual control line

摘要

RAM memory with shared SA structure, wherein a short circuit transistor (30) is connected, for all bit transfer line pairs connected to a sense amplifier (SA), to the sense amplifier and can be separately switched for each individual control line (9) using a short circuit control signal. An independent claim is made for a control method for a RAM memory with shared SA structure.