| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an improved insulation film which has a low dielectric constant and better film quality. SOLUTION: The insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of -50-100°C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form the siloxan polymer film with a low dielectric constant such as 2.5. COPYRIGHT: (C)2004,JPO&NCIPI
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