发明名称 MONOLITHIC SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a means for accurately arranging the height of the light-emitting points of respective lasers to be the same in a single laser chip, from which laser beams of different wavelengths are emitted. SOLUTION: A straight waveguide 10 that emits a laser beam of 780-nm wavelength and a straight waveguide 20 that emits a laser beam of 650-nm wavelength are constructed on a single chip with respective series of epitaxial layers, each depending on respective specifications of each laser element. The distance between the bottom face of a substrate 101 and the respective light-emitting points are arranged to be the same, with an accuracy of within±1μm by preventing the substrate 101 from being etched, when a series of epitaxial layers formed by the specification of firstly formed laser element is etched, by providing etch-stopper layers 103, 121 that are etched selectively on both the substrate 101 and the cladding layers closer to the substrate. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004228502(A) 申请公布日期 2004.08.12
申请号 JP20030017571 申请日期 2003.01.27
申请人 NEC COMPOUND SEMICONDUCTOR DEVICES LTD 发明人 TADA KENTARO
分类号 H01S5/22;H01S5/227;H01S5/323;(IPC1-7):H01S5/22 主分类号 H01S5/22
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