发明名称 |
Photoresist intensive patterning and processing |
摘要 |
A layer of Anti Reflective Coating (ARC) is first deposited over the surface of a silicon based or oxide based semiconductor surface, a dual hardmask is deposited over the surface of the layer of ARC. A layer of soft mask material is next coated over the surface of the dual hardmask layer, the layer of soft mask material is exposed, creating a soft mask material mask. The upper layer of the dual hardmask layer is next patterned in accordance with the soft mask material mask, the soft mask material mask is removed from the surface. The lower layer of the hardmask layer is then patterned after which the layer of ARC is patterned, both layers are patterned in accordance with the patterned upper layer of the dual hardmask layer. The substrate is now patterned in accordance with the patterned upper and lower layer of the dual hardmask layer and the patterned layer of ARC. The patterned upper and lower layers of the hardmask layer and the patterned layer of ARC are removed from the surface of the silicon based or oxide based semiconductor surface.
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申请公布号 |
US2004157444(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030361875 |
申请日期 |
2003.02.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
CHIU YUAN-HUNG;TSAI MING-HUAN;TAO HUN-JAN;CHEN JENG-HORNG |
分类号 |
H01L21/027;H01L21/033;H01L21/306;H01L21/308;H01L21/311;H01L21/314;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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