发明名称 |
Method for producing a semiconductor component, and semiconductor component produced by the same |
摘要 |
The invention relates to a method for producing a gate head which can be precisely scaled and for reducing parasitic capacities, for a semiconductor component comprising an at least approximately T-shaped electrode.
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申请公布号 |
US2004157423(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20040483433 |
申请日期 |
2004.01.09 |
申请人 |
BEHAMMER DAG |
发明人 |
BEHAMMER DAG |
分类号 |
H01L21/285;H01L21/338;H01L29/423;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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