发明名称 Nonvolatile memory
摘要 It is aimed to detect, notify, and save an abnormal area in semiconductor memory for greatly improving reliability. An inside of semiconductor memories provided for a memory card comprises a user area, a substitution area, an area substitution information storage area, and a management area. An inside of semiconductor memories comprises a user area, a substitution area, and a management area. The user area is a data area a user can use. The substitution area is substituted when an error occurs in the user area. The area substitution information storage area stores area substitution area information. The management area stores substitution information. The information processing section performs substitution on two levels as follows. When detecting an operation indicating a symptom of failure in a semiconductor memory area, the information processing section performs area substitution during an idle state of the memory card. When detecting a faulty operation in an area, the information processing section immediately performs area substitution.
申请公布号 US2004158775(A1) 申请公布日期 2004.08.12
申请号 US20030721086 申请日期 2003.11.26
申请人 发明人 SHIBUYA HIROFUMI;HARA FUMIO;GOTO HIROYUKI;SHIOTA SHIGEMASA
分类号 G06F12/16;G06F3/06;G06F12/00;G06K17/00;G11C29/00;H02H3/05;(IPC1-7):H02H3/05 主分类号 G06F12/16
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