| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor light emitting element exhibiting excellent emission characteristics and reliability and applicable to a light emitting diode or a semiconductor laser element. <P>SOLUTION: The lattice constant of a substrate is controlled by changing the composition of group I elements or group III elements using an oxide substrate having a composition represented by Li<SB>1-(x+y)</SB>Na<SB>x</SB>K<SB>y</SB>Al<SB>1-z</SB>Ga<SB>z</SB>O<SB>2</SB>(0≤x, y, z≤1, 0≤x+y≤1). Consequently, crystal defects and strain in the epitaxial layer of an oxide semiconductor light emitting element are reduced. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
