发明名称 SUBSTRATE TREATMENT EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a substrate treatment equipment and a substrate treatment method capable of minimizing an influence that the time required for the temperature adjustment treatment of the substrate degrades the throughput, and also to provide a substrate treatment equipment capable of precisely controlling the temperature in a treatment unit where the substrate is subjected to a liquid treatment. SOLUTION: Each 10-step thermal treatment unit section G3 to G5 and each 5-step coating treatment unit section G1 to G2 are disposed around a first main wafer transfer section A1 and a second main wafer transfer section A2, and the influence that the time required for the temperature adjustment treatment of the substrate degrades the throughput can be minimized by transferring the wafer W while controlling the temperature of the wafer W with a temperature adjustment/transferring equipment C in the thermal treatment unit sections G3 to G5. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004228594(A) 申请公布日期 2004.08.12
申请号 JP20040093799 申请日期 2004.03.26
申请人 TOKYO ELECTRON LTD 发明人 UEDA KAZUNARI;HAYASHI SHINICHI;IIDA NARIAKI;MATSUYAMA YUJI;DEGUCHI YOICHI
分类号 B08B3/02;B08B3/10;H01L21/027;H01L21/304;H01L21/677;H01L21/68;(IPC1-7):H01L21/68 主分类号 B08B3/02
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