| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which allows the formation of a plurality of interconnections on the top of a field oxide film above a deep trench so that they may not short-circuit mutually, and which can realize this structure at a reasonable manufacturing cost. SOLUTION: The deep trench 18 is formed in a silicon substrate 10. Then, a liner oxide film 20 is formed on the internal surface of the deep trench 18 and on top of the silicon substrate 10. Thereafter, the liner oxide film 20 formed on top of the silicon substrate 10 is removed by dry etching to a prescribed thickness. Then, a silicon nitride film is formed on top of the silicon substrate 10. The silicon nitride film is removed except in an active region, and the liner oxide film 20 exposed by the partial removal of the silicon nitride film is removed by wet etching. With a remaining part of the silicon nitride film as a mask, a field oxide film 32 is formed. COPYRIGHT: (C)2004,JPO&NCIPI
|
