| 摘要 |
PROBLEM TO BE SOLVED: To obtain a material for an insulation film, having excellent mechanical strengths and a low dielectric constant, to obtain a coating varnish containing the material, to prepare the insulation film formed by using the material or the varnish, to provide a semiconductor element, and to provide a semiconductor device. SOLUTION: The material for the insulation film gives the insulation film having a difference between fine pore volumes of≤0.001 cm<SP>2</SP>and a size of the fine pore of≤20 nm, wherein the difference between the fine pore volumes is measured so that cured films having two kinds of film thicknesses are formed on a silicon wafer by subjecting the material to film-forming, heating, and curing, and then the fine pore volumes per 1.0 cm<SP>2</SP>of the cured films are each measured by a nitrogen adsorption technique, and the size of the fine pore is measured by the nitrogen adsorption technique. The coating varnish is obtained by dissolving or dispersing the material for the insulation film in an organic solvent. The insulation film is formed by applying the material or the varnish onto the silicon wafer, then drying, heating, and curing the material or the varnish. The semiconductor element has the insulation film. The semiconductor device is obtained by using the semiconductor element. COPYRIGHT: (C)2004,JPO&NCIPI
|
