| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which in the semiconductor device containing a MIM (metal-insulator-metal) capacitor as a circuit element, when a metal film for an upper electrode is formed, even if there is a thin region, a defective connection by etching is not caused. <P>SOLUTION: A dielectric film and the metal film for the upper electrode are formed stackedly on a lower electrode. When a part of the metal film for the upper electrode is etched to form the upper electrode to form the MIM capacitor, a protective layer for preventing at least the lower electrode from being etched is formed so as to coat a part of a lower layer of the dielectric film or an upper layer of the metal film extended from a region where the MIM capacitor is to be formed. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
