| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical memory which can perform high density storage by using the polarized inversion structure of an inorganic ferro-electric crystal thin film, and to provide a method of writing and reading to/from it. SOLUTION: An inexpensive and stable oxide conductive crystal is utilized as a lower electrode. Thus, the defect of characteristic change caused by the deviation of composition of a recording medium is eliminated. COPYRIGHT: (C)2004,JPO&NCIPI
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