发明名称 SURFACE TREATMENT METHOD OF SHAPING DIE, AND SHAPING DIE
摘要 PROBLEM TO BE SOLVED: To provide a surface treatment method of a shaping die and the shaping die which can produce and reproduce the shaping die without any wet etching process nor grinding process. SOLUTION: First, the relationship between the angle of incidence of an ion beam and an etching rate distribution in a shaping surface 12 is calculated beforehand each for tungsten carbide (WC) composing a substrate, chromium (Cr) composing an intermediate layer and chromium nitride (CrN) composing a surface layer, under the irradiation conditions identical to those applied at the time of surface treatment except the angle of incidence of the ion beam. From a membrane thickness ratio of Cr to CrN constituting the shaping surface 12, based on the relationship, and by using the shaping die controlling angleγas a parameter, the etching rate distribution from the surface top to the periphery end part of the shaping surface 12 is calculated. Based on these calculation, the optimum combinational conditions of the shaping die control angleγand treatment time for the etching depth required for the treatment are worked out to carry out the treatment. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004224657(A) 申请公布日期 2004.08.12
申请号 JP20030016152 申请日期 2003.01.24
申请人 OLYMPUS CORP 发明人 HIDAKA TAKESHI
分类号 C03B11/08;C03B11/06;C23F4/00;(IPC1-7):C03B11/08 主分类号 C03B11/08
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