发明名称 Method of depositing DLC on substrate
摘要 Durability and/or longevity of a diamond-like carbon (DLC) layer can be improved by varying the voltage and/or ion energy used to ion beam deposit the DLC layer. For example, a relatively low voltage may be used to ion beam deposit a first portion of the DLC layer on the substrate, and thereafter a second higher voltage(s) used to ion beam deposit a second higher density portion of the DLC layer over the first portion of the DLC layer. In such a manner, ion mixing at the bottom of the DLC layer can be reduced, and the longevity and/or durability of the DLC improved.
申请公布号 US2004157058(A1) 申请公布日期 2004.08.12
申请号 US20030359298 申请日期 2003.02.06
申请人 VEERASAMY VIJAYEN S.;THOMSEN SCOTT V. 发明人 VEERASAMY VIJAYEN S.;THOMSEN SCOTT V.
分类号 C23C14/06;C23C14/22;(IPC1-7):C23C16/26;B32B9/00 主分类号 C23C14/06
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