发明名称 |
Method of depositing DLC on substrate |
摘要 |
Durability and/or longevity of a diamond-like carbon (DLC) layer can be improved by varying the voltage and/or ion energy used to ion beam deposit the DLC layer. For example, a relatively low voltage may be used to ion beam deposit a first portion of the DLC layer on the substrate, and thereafter a second higher voltage(s) used to ion beam deposit a second higher density portion of the DLC layer over the first portion of the DLC layer. In such a manner, ion mixing at the bottom of the DLC layer can be reduced, and the longevity and/or durability of the DLC improved.
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申请公布号 |
US2004157058(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030359298 |
申请日期 |
2003.02.06 |
申请人 |
VEERASAMY VIJAYEN S.;THOMSEN SCOTT V. |
发明人 |
VEERASAMY VIJAYEN S.;THOMSEN SCOTT V. |
分类号 |
C23C14/06;C23C14/22;(IPC1-7):C23C16/26;B32B9/00 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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