| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition method of a film to be deposited by plasma CVD which is capable of performing low-temperature film deposition, and reducing residues in a film even in the low-temperature film deposition. SOLUTION: When depositing a Ti film by CVD on a work substrate in a treatment chamber, a first step of generating first plasma while introducing TiCl<SB>4</SB>gas, H<SB>2</SB>gas and Ar gas, and a second step of generating second plasma while stopping the feed of TiCl<SB>4</SB>gas and introducing H<SB>2</SB>gas and Ar gas are alternately repeated for a plurality of times. The first plasma and the second plasma are changed over to follow the alternate gas change-over. COPYRIGHT: (C)2004,JPO&NCIPI
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