| 摘要 |
PROBLEM TO BE SOLVED: To provide a SONOS type nonvolatile memory and a method for manufacturing the same. SOLUTION: After a plurality of first gates 120 are formed on a semiconductor substrate 100, a charge storage spacer 140 and a second gate 185 that covers the charge storage spacer 140 are formed sequentially at the sidewall of the first gate 120. The charge storage spacer 140 can be formed by anisotropically etching a charge storage film until the film becomes below the upper surface of the first gate 120 after forming the charge storage film on the semiconductor substrate 100 including the first gate 120. Moreover, the second gate 185 is also formed by anisotropically etching a second gate conductive film formed on the semiconductor substrate 100 including the charge storage spacer 140. Due to this, the charge storage spacer 140 and the second gate 185 are self-aligned at the side of the first gate 120. After this, it is also possible to further form connectors 225 for connecting the first gate 120 and the second gate 185. COPYRIGHT: (C)2004,JPO&NCIPI
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