| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing dummy wafer by which the mechanical stress applied to a dummy wafer is removed without raising the impurity concentration in the surface of the dummy wafer. SOLUTION: At the time of manufacturing the dummy wafer, dummy wafers are disposed at prescribed intervals and heated at a so high heating temperature that the mechanical stresses applied to the dummy wafers and, at the same time, impurities in the surfaces of the wafers are removed sufficiently in a vacuum atmosphere or an inert gas atmosphere, in a heat-treating step performed for removing the mechanical stresses. COPYRIGHT: (C)2004,JPO&NCIPI
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