METHOD OF CONTROLLING CHARGED PARTICLE BEAM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND CHARGED PARTICLE BEAM EXPOSURE SYSTEM USING THE SAME

摘要

PROBLEM TO BE SOLVED: To remarkably reduce a blur caused by an optical aberration and a space charge effect in a charged particle beam exposure system. SOLUTION: In a cell aperture-type electron beam exposure system 1 using an electron beam of low acceleration voltage, the beam trajectory is controlled in the X direction and in the Y direction independently using a quadruple electrostatic type multi-pole lens 23 (Q1-Q4). Outside the third and the fourth multi-pole lens 23 (Q3 and Q4) with which the beam trajectory separates from the optical axis most both in the X direction and the Y direction, magnetic field type four-pole lenses 43a and 43b which excite a magnetic field are located, respectively. The magnetic field is overlaid on an electric field generated by the multi-pole lens 23 to correct a color aberration in the X direction and in the Y direction independently. COPYRIGHT: (C)2004,JPO&NCIPI