| 摘要 |
PROBLEM TO BE SOLVED: To prevent side faces of conductive films from being exposed in contact holes, in a semiconductor device wherein the contact holes are formed among the plurality of conductive films formed at spaces. SOLUTION: On top of a semiconductor substrate 11, gate electrodes 15 are formed at spaces via a silicon oxide film 12. The gate electrodes 15 are coated with an etching stopper film 19 and an interlayer insulation film 20. The contact holes 21 are formed in the interlayer insulation film 20, and a metal film 22 which constitutes a contact is formed inside the contact holes 21. The contact holes 21 are arranged so that the centers thereof may fall on the centers between each two adjacent gate electrodes 15. A dimension b of an upper opening of the contact holes 21 should satisfy b>a+2d<SB>max</SB>, where d<SB>max</SB>is the maximum value for overlay displacement when patterning the contact holes 21 and the reference (a) is a distance between the gate electrodes 15. COPYRIGHT: (C)2004,JPO&NCIPI
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