| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an SOI-type MIS transistor with body contact, in which change quantity of drain current due to alignment deviation is reduced and whose design precision is sufficient. SOLUTION: In a region of a semiconductor layer 3 surrounded by an element separation insulating film 4, an n-type high concentration source drain diffusion layer 5, a p-type channel region 6, p-type body drawing regions 7 and a p-type high concentration body contact region 8 are formed. A gate electrode 9 is composed of a first gate electrode part 9a, a second gate electrode part 9b ad a third gate electrode 9c. A connection part 9ab and a connection part 9bc have taper shapes. A size in a gate width direction of the second gate electrode part 9b is made smaller than that of an active region. COPYRIGHT: (C)2004,JPO&NCIPI
|
