SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To achieve a semiconductor which realizes microfabrication of a chip by forming a connection hole for a gate electrode (gate electrode contact) and a connection hole for a semiconductor substrate acjacent to it (substrate contact) of one common connection hole. SOLUTION: A silicon nitride film 106 at a part where a contact is formed on gate electrodes 104 and 105 is made to be thin by etching in advance. After forming a silicon nitride film 115 and a BPSG film 116 on the whole surface, the BPSG film 116 in a prescribed area is etched and the silicon nitride films 115 and 116 are etched. Consequently, the gate electrode contact and the substrate contact which conventionally have to be formed separately in different processes can simultaneously be formed as one common substrate/gate electrode common contact 128. COPYRIGHT: (C)2004,JPO&NCIPI