发明名称 |
Discontinuity prevention for SiGe deposition |
摘要 |
The present disclosure provides a process for producing a SiGe layer in a bipolar device having a reduced amount of gaps or discontinuities on a shallow trench isolation (STI) region use for a base electrode connection. The process is used for forming an SiGe layer for use in a semiconductor device. The process includes doping a single crystal substrate with a first dopant type, baking the doped single crystal substrate at a temperature less than 900° C., and at a pressure less than 100 torr; and depositing the SiGe layer on the baked single crystal substrate (epi SiGe) to serve as the base electrode and on the STI region (poly SiGe) to serve as a connection for the base electrode. The semiconductor device is thereby created from the combination of the doped single crystal substrate and the deposited SiGe layer.
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申请公布号 |
US2004157399(A1) |
申请公布日期 |
2004.08.12 |
申请号 |
US20030365257 |
申请日期 |
2003.02.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
LEE KUEN-CHYR;YAO LIANG-GI;YANG FU CHIN;CHEN SHIH-CHANG;LIANG MONG-SONG |
分类号 |
H01L21/20;H01L21/205;H01L21/3205;H01L21/331;H01L21/762;(IPC1-7):H01L21/331;H01L21/822 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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