| 发明名称 |
Semiconductor device, apparatus and method for manufacturing the same |
| 摘要 |
An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
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| 申请公布号 |
US2004155278(A1) |
申请公布日期 |
2004.08.12 |
| 申请号 |
US20030410153 |
申请日期 |
2003.04.10 |
| 申请人 |
NATORI KATSUAKI;NAKAZAWA KEISUKE;YAMAKAWA KOJI;KANAYA HIROYUKI;KUMURA YOSHINORI;ITOKAWA HIROSHI;ARISUMI OSAMU |
发明人 |
NATORI KATSUAKI;NAKAZAWA KEISUKE;YAMAKAWA KOJI;KANAYA HIROYUKI;KUMURA YOSHINORI;ITOKAWA HIROSHI;ARISUMI OSAMU |
| 分类号 |
H01L21/28;C23C14/08;C23C14/58;C23C16/00;H01L21/00;H01L21/02;H01L21/20;H01L21/26;H01L21/768;H01L21/8234;H01L21/8246;H01L23/58;H01L27/105;H01L27/115;H01L29/417;H01L29/76;H01L31/062;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/28 |
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