发明名称 MIXED TECHNOLOGY MEMS/SIGE BICMOS DIGITIZING ANALOG FRONT END WITH DIRECT RF SAMPLING
摘要 A digitizing analog front end (DAFE) (50) using mixed technology on a single substrate is described. SiGe BiCMOS technology is implemented for the semiconductor components, which include a low noise amplifier (64) and an analog-to-digital converter (68). Micro Electro Mechanical System (MEMS) switches are used to change the filtering characteristics of several filters, including an anti-aliasing filter (66) and a pre-select and anti-jamming filter (62).
申请公布号 WO2004068731(A2) 申请公布日期 2004.08.12
申请号 WO2004US02055 申请日期 2004.01.26
申请人 RAYTHEON COMPANY 发明人 KENT, SAMUEL, D., III;LINDER, LLOYD, F.;CAI, KHIEM, V.
分类号 H01H1/00;H04B1/10 主分类号 H01H1/00
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