摘要 |
<p>A light-emitting device (100) comprises a light-emitting layer portion (24) composed of Al-containing compound semiconductor layers (4, 5, 6) and oxide transparent electrode layers (8, 10) for applying an emission drive voltage to the light-emitting layer portion (24). A light from the light-emitting layer portion (24) is taken out through the oxide transparent electrode layers (8, 10). Oxide protective layers (7, 9) are respectively interposed between the light-emitting layer portion (24) and the oxide transparent electrode layers (8, 10) for suppressing oxidation of Al in the light-emitting layer portion (24). Consequently, there can be obtained a light-emitting device wherein oxide transparent electrode layers are used as the electrodes for emission drive and deterioration in the luminous efficiency or in the light-taking-out efficiency due to oxidation of Al in the light-emitting layer portion can be effectively prevented.</p> |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD.;ISHIZAKI, JUN-YA;NOZAKI, SHINJI;UCHIDA, KAZUO;MORISAKI, HIROSHI |
发明人 |
ISHIZAKI, JUN-YA;NOZAKI, SHINJI;UCHIDA, KAZUO;MORISAKI, HIROSHI |