| 摘要 |
An arrangement comprising a substrate, a capacitor, an interconnection layer and a contact structure, wherein the capacitor comprises a first electrode (6) and a second electrode (9) and also an interposed dielectric (8), the contact structure comprises a UBM (under-bump metallization) layer (9) and a bump contact (10), the interconnection layer (6) forms the first electrode of the capacitor, and the UBM layer (9) forms the second electrode of the capacitor. |
