DOUBLE GATE MOSFET TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF,申请号EP20000949064-传众专利搜索

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发明名称	DOUBLE GATE MOSFET TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF
摘要
申请公布号	EP1181723(B1)	申请公布日期	2004.08.11
申请号	EP20000949064	申请日期	2000.05.26
申请人	INFINEON TECHNOLOGIES AG	发明人	ROESNER, WOLFGANG;SCHULZ, THOMAS;RISCH, LOTHAR
分类号	H01L29/417;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L29/786	主分类号	H01L29/417
代理机构		代理人
主权项
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