发明名称 ADDRESS BUFFER CIRCUIT FOR PREVENTING MALFUNCTIONS IN ASYNCHRONOUS SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An address buffer circuit for preventing the malfunctions in an asynchronous semiconductor memory device is provided to prevent the misoperation of the asynchronous semiconductor memory device. CONSTITUTION: An address buffer circuit for preventing the malfunctions in an asynchronous semiconductor memory device includes an inverting circuit(10), a delay circuit(20) and a detection circuit(30). The inverting circuit(10) is consisted of a plurality of logic gates for responding to the external address signal from the outside and the first chip control signal. The delay circuit(20) outputs the second chip control signals and the plurality of delayed address signals in response to the signals inputted from the inverting circuit(10). And, the detection circuit(30) is consisted of a plurality of logic gates for outputting the address shift detection signals in response to the second chip control signal inputted from the delay circuit(20) and the delayed address signals and the semiconductor devices.
申请公布号 KR20040070963(A) 申请公布日期 2004.08.11
申请号 KR20030007209 申请日期 2003.02.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MIN, BYEONG JUN
分类号 G11C7/10;(IPC1-7):G11C7/10 主分类号 G11C7/10
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