发明名称 METHOD FOR DESIGNING OVERLAY MEASUREMENT KEY OF SEMICONDUCTOR
摘要 PURPOSE: A method for designing an overlay measurement key of a semiconductor is provided to remove an overlay measurement error generated from an implant pattern step by improving a design of the overlay measurement key. CONSTITUTION: A blocking process is performed on a reference region of a first implant layer from a scribe line region. A reticle(50) of the first implant layer pattern is changed automatically. A photoresist blocking process is performed on the reference region of a second implant layer in a process for patterning the first implant layer. An implantation process is performed on the first implant layer. An overlay measurement sensor detects correctly a signal of an overlay measurement light source though an implanted poly surface without damage in a process for patterning the second implant layer.
申请公布号 KR20040070675(A) 申请公布日期 2004.08.11
申请号 KR20030006854 申请日期 2003.02.04
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 LEE, DONG JIN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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