发明名称 |
METHOD FOR DESIGNING OVERLAY MEASUREMENT KEY OF SEMICONDUCTOR |
摘要 |
PURPOSE: A method for designing an overlay measurement key of a semiconductor is provided to remove an overlay measurement error generated from an implant pattern step by improving a design of the overlay measurement key. CONSTITUTION: A blocking process is performed on a reference region of a first implant layer from a scribe line region. A reticle(50) of the first implant layer pattern is changed automatically. A photoresist blocking process is performed on the reference region of a second implant layer in a process for patterning the first implant layer. An implantation process is performed on the first implant layer. An overlay measurement sensor detects correctly a signal of an overlay measurement light source though an implanted poly surface without damage in a process for patterning the second implant layer.
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申请公布号 |
KR20040070675(A) |
申请公布日期 |
2004.08.11 |
申请号 |
KR20030006854 |
申请日期 |
2003.02.04 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
LEE, DONG JIN |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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