Magnetic random access memory device

摘要

A four-conductor MRAM device comprises an array of memory cells, each of the memory cells including a first magnetic layer (104), a dielectric (106), and a second magnetic layer (105), local column sense lines (302) wherein one is electrically connected to the first magnetic layer (104) of the array of memory cells, local row sense lines (303) wherein one is electrically connected to the second magnetic layer (105), global column write lines (301) parallel to the column sense lines (302), global row write lines (304) parallel to the local row sense lines (303), and wherein the local column sense lines (302) and the local row sense lines (303) are connected to read data from the array of memory cells and the global column write lines (301) and the global row write lines (304) are connected to write data to the array of memory cells. <IMAGE>