METHOD FOR MONITORING PARTICLES OF ETCH EQUIPMENT

摘要

PURPOSE: A method for monitoring particles of etch equipment is provided to reduce defects of a chamber due to particles by monitoring simultaneously the particles generated from a wall and a dome within the chamber and the particles generated from an inside and an outside of an electrostatic chuck and a cathode. CONSTITUTION: A unipolar electrostatic chuck(20) is loaded on an upper surface of a cathode(10) within a chamber. A wafer(30) for checking particles is loaded on the unipolar electrostatic chuck. An inert gas flows to a wall(60) and a dome(50) of the chamber. A wafer backside cooling gas flows to the unipolar electrostatic chuck. Each absorbing state of the particles of the inside and the outside of the unipolar electrostatic chuck and the particles of the cathode on the wafer for checking the particles are monitored by performing a monitoring process.