| 摘要 |
PURPOSE: A method for growing an N-doped P-type zinc oxide layer is provided to enhance a characteristic of a ZnO layer by transmitting a Zn source and an oxygen source onto the surface of a substrate. CONSTITUTION: A predetermined substrate is loaded into an inside of a reaction chamber(110). An N2 gas is injected into the inside of the reaction chamber. A carrier gas of a Zn precursor, oxygen, and a dopant source are supplied to the inside of the reaction chamber. A Zn source is provided to the inside of the reaction chamber. The process for loading the predetermined substrate includes a process for cleaning the substrate in order of TCE, acetone, methanol, and Di water and a process for drying the substrate by using a nitrogen gas.
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