STRUCTURE OF FILM IN SEMICONDUCTOR EXPOSURE PROCESS AND FORMING METHOD THEREOF

摘要

PURPOSE: A method for forming a structure of a film in a semiconductor exposure process is provided to eliminate the influence of thickness variation of a substrate and an optical path difference by depositing a high reflectivity film on the substrate and by making all the light having passed through a photoresist layer/BARC(bottom anti-reflective coating) reflect on the high reflectivity film. CONSTITUTION: An opaque film that has an optical parameter value greater than the reflectivity of a light source by a predetermined value is formed or more on a transparent substrate(304). A BARC(302) is formed on the opaque film. A photoresist film pattern is formed on the BARC.